Spectroscopic characterization of naturally and chemically oxidized silicon surfaces

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Spectroscopic characterization of naturally and chemically oxidized silicon surfaces

フォーマット:

論文

責任表示:

Tsunoda, Kazuaki ; Ohashi, Emiko ; Adachi, Sadao

言語:

英語

出版情報:

American Institute of Physics, 2003-11-01

著者名:

掲載情報:

Journal of Applied Physics

ISSN:

0021-8979

巻:

94

通号:

9

開始ページ:

5613

終了ページ:

5616

バージョン:

VoR

概要:

application/pdf<br />Journal Article<br />We have determined the thicknesses of naturally and chemically grown oxides on HF-cleaned\nsilicon surfaces in ambient air and in NH4OH/H2O2/H2O solution, respectively, using spectroscop … ic\nellipsometry. The naturally grown oxide thickness versus air-exposure time plots yield a rate\nconstant of 3.5+-0.5 Å/decade in ambient air. Chemical oxidation occurs immediately upon\nimmersing the sample in the chemical solution and leaves the sample surface terminated with ～6 Å\nof a chemical oxide. Photoreflectance intensity is found to be strongly dependent on such surface\nprocessing, and results are explained by the different degree of surface (interface) states. 続きを見る

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受理日:	2003-11-01
URL:	http://hdl.handle.net/10087/2939

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