Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution

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Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution

フォーマット:

論文

責任表示:

Tomioka, Katsuhiro ; Adachi, Sadao

言語:

英語

出版情報:

American Institute of Physics, 2005-12-19

著者名:

掲載情報:

Applied Physics Letters

ISSN:

0003-6951

巻:

87

通号:

25

開始ページ:

251920-1

終了ページ:

251920-3

バージョン:

VoR

概要:

application/pdf<br />Journal Article<br />A new method of fabricating porous silicon emitting in the ultraviolet (UV) spectral region is\npresented. This method uses photoetching in an aqueous salt (KF) solution. Strong UV\nphot … oluminescence is observed at ～3.3 eV with a full width at a half maximum of ～0.1 eV, which\nis much narrower than those reported previously. Fourier transform infrared spectroscopy suggests\nthat the surface oxide produced during photoetching plays an important role in the UV emission of\nthe KF-prepared PSi. 続きを見る

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詳細

受理日:	2005-12-19
URL:	http://hdl.handle.net/10087/2945

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