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チオフェンを原料とする硫黄ドープアモルファス炭素薄膜のCVD合成
- フォーマット:
- 論文
- 責任表示:
- 平出, 孝夫 ; 小野, 章夫 ; 伏木, 徹 ; 竹澤, 信隆 ; 黒田, 真一 ; 吉本, 護 ; 山田, 秀雄
- 言語:
- 日本語
- 出版情報:
- 日本セラミックス協会, 2002-05-01
- 著者名:
平出, 孝夫 小野, 章夫 伏木, 徹 竹澤, 信隆 黒田, 真一 吉本, 護 山田, 秀雄 - 掲載情報:
- 日本セラミックス協会学術論文誌 : Nippon Seramikkusu Kyokai gakujutsu ronbunshi
- ISSN:
- 09145400
- 巻:
- 111
- 通号:
- 1290
- 開始ページ:
- 133
- 終了ページ:
- 136
- バージョン:
- VoR
- 概要:
- application/pdf<br />Journal Article<br />Amorphous carbon thin films containing sulfur were synthesized from thiophene (C_4H_4S) by the r.f. (13.56 MHz) plasma CVD. The r.f. power was applied intermittently to control the deposition temperature (T_d). While maintaining a constant r.f. power (200 W) and reactive pressure (13.3 Pa), we investigated the effect of T_d on the film chemical structures and properties: specifically microroughness, density, … microhardness and internal stress. The deposition rate and microroughness of the films decreased with increasing T_d, while the film density, microhardness and internal stress increased with increasing T_d. X-ray photoelectron spectroscopic (XPS) analysis indicated that S/C ratio of the films remained constant and has no connection with T_d. XPS and Raman spectroscopic analyses showed that the films were composed of two kinds of microdomains with sp^3 and sp^2 bonds similar to the diamond-like carbon (DLC) film. Sulfur incorporation into the film significantly reduced the internal stress. 続きを見る
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