チオフェンを原料とする硫黄ドープアモルファス炭素薄膜のCVD合成

フォーマット:

論文

責任表示:

平出, 孝夫 ; 小野, 章夫 ; 伏木, 徹 ; 竹澤, 信隆 ; 黒田, 真一 ; 吉本, 護 ; 山田, 秀雄

言語:

日本語

出版情報:

日本セラミックス協会, 2002-05-01

著者名:

平出, 孝夫

小野, 章夫

伏木, 徹

竹澤, 信隆

黒田, 真一

吉本, 護

山田, 秀雄

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掲載情報:

日本セラミックス協会学術論文誌 : Nippon Seramikkusu Kyokai gakujutsu ronbunshi

ISSN:

09145400      

巻:

111

通号:

1290

開始ページ:

133

終了ページ:

136

バージョン:

VoR

概要:

application/pdf<br />Journal Article<br />Amorphous carbon thin films containing sulfur were synthesized from thiophene (C_4H_4S) by the r.f. (13.56 MHz) plasma CVD. The r.f. power was applied intermittently to control the deposition temperature (T_d). While maintaining a constant r.f. power (200 W) and reactive pressure (13.3 Pa), we investigated the effect of T_d on the film chemical structures and properties: specifically microroughness, density, … microhardness and internal stress. The deposition rate and microroughness of the films decreased with increasing T_d, while the film density, microhardness and internal stress increased with increasing T_d. X-ray photoelectron spectroscopic (XPS) analysis indicated that S/C ratio of the films remained constant and has no connection with T_d. XPS and Raman spectroscopic analyses showed that the films were composed of two kinds of microdomains with sp^3 and sp^2 bonds similar to the diamond-like carbon (DLC) film. Sulfur incorporation into the film significantly reduced the internal stress. 続きを見る